sot23 npn silicon planar medium power high performance transistor issue 3 - november 1995 j partmarking detail ? 495 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 170 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 170 v i c =100 m a v ceo(sus) 150 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off currents i cbo 100 na v cb =150v i ces 100 na v ce =150v emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.2 0.3 v v i c =250ma, i b =25ma* i c =500ma, i b =50ma* base-emitter saturation voltage v be(sat) 1.0 v i c =500ma, i b =50ma* base-emitter turn on voltage v be(on) 1.0 v i c =500ma, v ce =10v* static forward current transfer ratio h fe 100 100 50 10 300 i c =1ma, v ce =10v i c =250ma, v ce =10v* i c =500ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 100 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT495 c b e 3 - 123 FMMT495 3 - 124 10a 1a 10ma 100ma 1ma -55c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 80 0 240 160 320 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25 c 0.2 0.3 0.4 i c /i b =10 10a 1a 0.4 +100 c -55 c +25 c +100 c -55c +25 c -55 c +25 c +100 c i c /i b =10 v ce =10v v ce =10v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0 0.1 0.3 0.2 1ma 0.01 i c /i b =50 0.001 1000 typical characteristics
sot23 npn silicon planar medium power high performance transistor issue 3 - november 1995 j partmarking detail ? 495 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 170 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 170 v i c =100 m a v ceo(sus) 150 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off currents i cbo 100 na v cb =150v i ces 100 na v ce =150v emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.2 0.3 v v i c =250ma, i b =25ma* i c =500ma, i b =50ma* base-emitter saturation voltage v be(sat) 1.0 v i c =500ma, i b =50ma* base-emitter turn on voltage v be(on) 1.0 v i c =500ma, v ce =10v* static forward current transfer ratio h fe 100 100 50 10 300 i c =1ma, v ce =10v i c =250ma, v ce =10v* i c =500ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 100 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT495 c b e 3 - 123 FMMT495 3 - 124 10a 1a 10ma 100ma 1ma -55c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 80 0 240 160 320 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25 c 0.2 0.3 0.4 i c /i b =10 10a 1a 0.4 +100 c -55 c +25 c +100 c -55c +25 c -55 c +25 c +100 c i c /i b =10 v ce =10v v ce =10v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0 0.1 0.3 0.2 1ma 0.01 i c /i b =50 0.001 1000 typical characteristics
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